METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE BY THE SAME

摘要

A semiconductor device and its fabricating method are provided to reduce a design rule by forming a transistor in a pillar-type active region and a forming a bit line in a substrate. A portion of a semiconductor substrate(100) is etched to form a pillar-type active region(110). A blocking film is formed on the substrate to selectively expose a sidewall of a lower end of the pillar-type active region. A bit line(125) is selectively formed on the exposed sidewall of the lower end of the pillar-type active region. The pillar-type active region is formed by primarily etching the substrate, forming a spacer on a sidewall of the etched region, and secondary etching the substrate using the spacer as a mask.