发明名称 |
Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate |
摘要 |
For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-Å family heterostructure devices.
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申请公布号 |
US7224041(B1) |
申请公布日期 |
2007.05.29 |
申请号 |
US20040856175 |
申请日期 |
2004.05.28 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
SHEROHMAN JOHN W.;COOMBS, III ARTHUR W.;YEE JICK HONG;WU KUANG JEN J. |
分类号 |
H01L29/12;H01L31/0328 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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