Method for making a stack of capacitors, in particular for dynamic random access memory [DRAM]

摘要

The invention concerns a method which consists in forming on a substrate ( 1 ) coated with a dielectric material layer ( 3 ) provided with a window ( 3 a), a stack of successive layers alternately of germanium or SiGe alloy ( 4, 6, 8 ) and polycrystalline silicon ( 5, 7, 9 ); selective partial elimination of the germanium or SiGe alloy layers, to form an tree-like structure; forming a thin layer of dielectric material ( 10 ) on the tree-like structure; and coating the tree-like structure with polycrystalline silicon ( 11 ). The invention is useful for making dynamic random-access memories.