发明名称 |
Ambient gas treatment of porous dielectric |
摘要 |
A method of modifying the porosity of a thickness of a layer of porous dielectric material having a surface and formed on a semiconductor substrate is provided by exposing the porous dielectric material to a sufficient temperature in the presence of a first gas to drive moisture particles out of the pores. Modifying also includes, exposing the porous dielectric material to a radio frequency stimulus of sufficient power in the presence of a second gas to densify a thickness of the porous dielectric material to reduce or prohibit subsequent absorption of moisture or reactant gas particles by the thickness or porous dielectric material.
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申请公布号 |
US7223705(B2) |
申请公布日期 |
2007.05.29 |
申请号 |
US20030429984 |
申请日期 |
2003.05.06 |
申请人 |
INTEL CORPORATION |
发明人 |
SRIRAM MANDYAM A.;O'LOUGHLIN JENNIFER |
分类号 |
H01L21/31;H01L21/3105;H01L21/314;H01L21/316;H01L21/318;H01L21/469;H01L21/768 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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