发明名称 |
METHOD OF FORMING SHALLOW TRENCH ISOLATION IN THE SEMICONDUCTOR MANUFACTURING PROCESS AND SEMICONDUCTOR DEVICE INCLUDING THE SHALLOW TRENCH ISOLATION |
摘要 |
A method for forming a shallow trench isolation and a semiconductor device having the shallow trench isolation are provided to prevent a defect of bullet hole by rounding corners of a bottom portion of the shallow trench isolation through a dry etching and wet etching. An etching mask is formed to expose first and second regions on a substrate(10). The substrate is dry etched by using the etching mask to form a first trench region(40), in which the first and second regions are removed. The substrate between the first and the second regions are wet etched to form a second trench region(70). An insulation layer is formed in the second trench. The etching mask consists of a pad oxide layer(20) and a nitride layer(30).
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申请公布号 |
KR100725350(B1) |
申请公布日期 |
2007.05.29 |
申请号 |
KR20050132012 |
申请日期 |
2005.12.28 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM, BYUNG HO |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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