发明名称 |
Thin film transistor array panel |
摘要 |
A thin film array panel is provided, which includes: a gate line formed on a substrate; a first insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line formed on the gate insulating layer and intersecting the gate line; a drain electrode formed at least on the semiconductor layer; a conductor arranged in parallel to the data line; a second insulating layer formed on the data line, the drain electrode, and the conductor and having a first contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the second insulating layer, connected to the drain electrode through the first contact hole, fully covering the data line. |
申请公布号 |
US7223997(B2) |
申请公布日期 |
2007.05.29 |
申请号 |
US20040008720 |
申请日期 |
2004.12.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KYUNG-WOOK;KIM BEOM-JUN;KIM SUNG-MAN;AHN BYEONG-JAE;SONG YOUNG-GOO;KONG HYANG-SHIK |
分类号 |
G02F1/1333;H01L29/04;G02F1/1335;G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368;H01L29/786 |
主分类号 |
G02F1/1333 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|