发明名称 Substrate heating method, substrate heating system, and applying developing system
摘要 With respect to a substrate on which a resist solution is applied, the inplane uniformity of the quality of a resist film is improved in a heating processing carried out before exposure, and the yields of products are improved. A substrate on which a resist solution is applied is mounted on a heating plate in a processing vessel. Then, a purge gas is supplied into the processing vessel, and heating is started. Above the mounting position of the substrate, a thickness detecting sensor for monitoring the thickness of the resist film formed on the surface of the substrate is provided. When the thickness becomes a predetermined value or less, a control part cause a lift pin to upwardly move so as to increase the distance between the substrate and the heating plate. Thus, the heating value applied to the substrate decreases, and thereafter, only the solvent is volatilized without having a bad influence on a polymer in the resist film.
申请公布号 US7223945(B2) 申请公布日期 2007.05.29
申请号 US20060352340 申请日期 2006.02.13
申请人 TOKYO ELECTRON LIMITED 发明人 SHINYA HIROSHI;KITANO TAKAHIRO
分类号 F26B9/06;H05B1/02;H01L21/00;H01L21/027 主分类号 F26B9/06
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