发明名称 Semiconductor wafer and manufacturing method thereof
摘要 The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral portion thereof, and a silicon thin film formed over the entire one surface of the insulated board. In the semiconductor wafer, ions are implanted in an area containing the orientation flat at a peripheral portion of the silicon thin film to amorphize silicon. Thus, the translucency at the amorphized spot is eliminated and accurate positioning using the conventional optical sensor can be performed.
申请公布号 US7224031(B2) 申请公布日期 2007.05.29
申请号 US20050029648 申请日期 2005.01.06
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 UCHIDA HIROAKI
分类号 H01L29/786;H01L21/00;H01L21/86;H01L27/12 主分类号 H01L29/786
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