| 摘要 |
The invention makes it possible, for the first time, to produce, despite conventional p-type MOS technology, fast logical gates based on organic field effect transistors. This is primarily due to the early saturation effect of OFETs having very thin semi-conducting layers, and, furthermore, to the use of OFETs having specific properties as the organic logic components and to a novel layout of the circuit containing these logic components.
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