| 摘要 |
A field effect transistor, which is arranged in a semiconductor device, comprises a first and a second doped source/drain region, both regions being arranged within a semiconductor substrate on either side of a gate electrode, and a channel region formed within the substrate between both doped source/drain regions beneath said gate electrode. A gate oxide layer is formed upon the semiconductor substrate. The gate electrode contacts a surface of the gate oxide layer and further comprises at least a first and a second conductive layer, wherein the first and second conductive layers are made of materials having different work functions with respect to each other. The first conductive layer contacts the gate oxide layer within a first portion of the surface, and the second conductive layer contacts the gate oxide layer within a second portion of the surface. The first conductive layer is further conductively connected to the second conductive layer. |
