发明名称 |
Semiconductor device that includes a silicide region that is not in contact with the lightly doped region |
摘要 |
There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively etched to form a contact pad or conductive interconnects.
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申请公布号 |
US7223666(B2) |
申请公布日期 |
2007.05.29 |
申请号 |
US20050033279 |
申请日期 |
2005.01.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI;FUJIMOTO ETSUKO |
分类号 |
H01L29/76;H01L29/78;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/45;H01L29/786 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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