| 摘要 |
A ferroelectric memory device includes a main bit line, a plurality of local bit lines associated with the main bit line and disposed intersecting word lines, a plurality of first switching elements provided between the local bit lines and the main bit line, respectively, a plurality of memory cells provided at intersecting positions between the word lines and each of the plurality of local bit lines, and a plurality of redundant memory cells provided at intersecting positions between the main bit line and the word lines, wherein a malfunctioning memory cell is prohibited from operating and a redundant memory cell performs a substitute operation, and the plurality of first switching elements are operated such that the local bit line connected with the malfunctioning memory cell is connected to the main bit line.
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