发明名称 |
Transistor gate electrode having conductor material layer |
摘要 |
Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.
|
申请公布号 |
US7223679(B2) |
申请公布日期 |
2007.05.29 |
申请号 |
US20030745978 |
申请日期 |
2003.12.24 |
申请人 |
INTEL CORPORATION |
发明人 |
MURTHY ANAND;BOYANOV BOYAN;DATTA SUMAN;DOYLE BRIAN S.;JIN BEEN-YIH;YU SHAOFENG;CHAU ROBERT |
分类号 |
H01L21/4763;H01L21/28;H01L21/8234;H01L21/8238;H01L29/10;H01L29/49 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|