| 发明名称 |
LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER |
| 摘要 |
The invention provides a high quality single crystal wafer of SiC having a diameter of at least about 3 inches and a Ic screw dislocation density on at least one surface from 500 cm -2 to 2500 cm 2 . |
| 申请公布号 |
KR20070054719(A) |
申请公布日期 |
2007.05.29 |
| 申请号 |
KR20077007696 |
申请日期 |
2007.04.04 |
| 申请人 |
CREE INC. |
发明人 |
POWELL ADRIAN;BRADY MARK;MUELLER STEPHAN GEORG;TSVETKOV VALERI F.;LEONARD ROBERT TYLER |
| 分类号 |
C30B29/36 |
主分类号 |
C30B29/36 |
| 代理机构 |
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代理人 |
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