| 发明名称 |
SELF-PATTERING OF PHOTO-ACTIVE DIELECTRIC MATERIALS FOR INTERCONNECT ISOLATION |
| 摘要 |
<p>In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.</p> |
| 申请公布号 |
SG131948(A1) |
申请公布日期 |
2007.05.28 |
| 申请号 |
SG20070030521 |
申请日期 |
2004.10.14 |
| 申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
PING LU WU;CHAO ZHANG BEI;CHOO HSIA LIANG |
| 分类号 |
H01L21/4763;H01L21/48;H01L21/768;H01L23/48;H01L23/532;H01L29/40 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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