发明名称 MICRO PATTERN FORMING MATERIAL, METHOD OF FORMING MICRO RESIST PATTERN AND ELECTRONIC DEVICE
摘要 <p>A fine pattern forming material comprising a water soluble resin of polyvinyl alcohol derivative, etc., a water soluble crosslinking agent of melamine derivative, urea derivative, etc., an amine compound, a nonionic surfactant and water or a solution of a mixture of water and water soluble organic solvent, the solution exhibiting a pH value of >7. This fine pattern forming material is applied onto resist pattern (3) to thereby form coating layer (4), and the coating layer (4) is heated and developed to thereby form crosslinked coating layer (5). The thickness of the crosslinked coating layer is increased by the use of a secondary amine compound and/or tertiary amine compound over that realized when no amine compound is added, while the thickness of the crosslinked coating layer is decreased by the use of a quaternary amine.</p>
申请公布号 KR20070054185(A) 申请公布日期 2007.05.28
申请号 KR20077002839 申请日期 2007.02.05
申请人 RENESAS TECHNOLOGY CORP.;AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 ISHIBASHI TAKEO;TAKAHASHI KIYOHISA;TAKANO YUSUKE
分类号 G03F7/40;H01L21/027 主分类号 G03F7/40
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