METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING BURIED GATE

摘要

A method for fabricating a semiconductor device having a buried gate is provided to preserve a liner formed on both sidewalls of an active region overlapped over the gate by extending the gate onto an isolation layer. An isolation trench is formed on a semiconductor substrate to define an active region(S20). A liner is formed on a sidewall of the active region(S30). An isolation layer is formed to fill the isolation trench(S40), and a hard mask pattern is formed on the substrate(S50). The substrate is etched by using the hard mask pattern as an etching mask to form a gate trench(S60). A gate is formed on the gate trench(S70), and then the hard mask pattern is removed(S80). A gate capping pattern is formed on the gate(S90).