SEMICONDUCTOR DEVICE HAVING BURIED GATE ELECTRODE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device having a buried gate electrode and its fabricating method are provided to improve problems of a transistor which are resulted from a body effect, by extending the buried gate electrode across an isolation layer. An isolation layer is formed on a semiconductor substrate(31) to define an active region. An insulated gate electrode(57') extends across the active region to fill a portion of a gate trench formed on the isolation layer and cover at least one sidewall of the active region. An insulation pattern(59) is formed on the gate electrode. The portion of the gate electrode covering the sidewall of the active region is lower than the portion of the gate electrode extending across the active region.