| 摘要 |
A method for fabricating a semiconductor device is provided to prevent an abnormal oxidization of tungsten silicide and prevent stress from being applied to an interface between an isolation layer and tungsten silicide by forming an oxide layer through a low-temperature radical oxidization. A substrate(21) with gate lines are prepared, and a capping layer is formed on the entire surface of the substrate having the gate lines. Then, the capping layer is oxidized, and an insulation layer is formed on the oxidized capping layer(29a). The capping layer is made of a nitride-based material. The capping layer is formed using a mixture gas including SiH4, NH3, and H2 at the range of 400 to 600 °C.
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