发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
A plasma processing apparatus is provided to minimize the influence of plasma by dispersing the heat and vacuum pressure applied to a chamber and to reduce fabrication costs by minimizing the size and weight of the chamber using an improved chamber structure. A plasma processing apparatus includes a vacuum chamber. The vacuum chamber(10) is composed of an upper electrode(13) a lower electrode(14). The vacuum chamber further includes an inner frame and an outer frame. The inner frame(12) is used for offsetting the influence of plasma of the vacuum chamber. The outer frame(11) is used for offsetting the vacuum pressure of the vacuum chamber. The outer and inner frames have different structures, respectively.
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申请公布号 |
KR100724284(B1) |
申请公布日期 |
2007.05.28 |
申请号 |
KR20050082654 |
申请日期 |
2005.09.06 |
申请人 |
INTEGRATED PROCESS SYSTEMS LTD. |
发明人 |
KIM, HYUNG JUN;KIM, TAE YOUNG |
分类号 |
H01L21/02;H01L21/203;H01L21/3065 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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