| 摘要 |
PURPOSE:To obtain high O2-RIE resistance as well as to enable development to be processed by the use of alkali developing solution by letting developing solution be composed of poly(silylenes) inclusing combination which shall be groups while being cleaved so as to be soluble to alkali, and of acid producing material capable of producing acids by means of radioactive ray irradiation. CONSTITUTION:Poly(silylenes) shall be the poly(silylenes) as indicated by a formula (I). In the formula, R<1> represents aryl groups such as, for example, methyl groups, sec(No,2)-butyl groups and the like, R<2> represents a group selected out of alkali groups such as, for example, methyl groups, ethyl groups and the like, and R<6> shall be selected out of t(No.3)-butyl, 2-cyclohexanyl and 1.1-demethyl benzyl. And the molecular weight of the poly(silylenes) shall be the weighted means of 2,000 through 50,000. In addition, some acid producing material is available, which is excellent in compatibility with the poly(silylenes), and is also soluble to solvent used for preparing coating solution at the time of spin coating, in this case, diphenyl(4-t-butylphenyl)sulfoniumP- toluenesulfonate and the like shall be used as a good example. And the content of acid producing material to the poly(silylenes) shall be within the range of 0.01 to 20% by weight. This thereby enables patterning to be processed by the use of alkali developing solution. |
