| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device high in heat dissipation properties, its manufacturing method, and a substrate used for manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device in one embodiment is provided with first/second electrode leads which are separately arranged from each other and formed by laminating a first Au film, a first Ni film, a Cu film, a second Ni film, and a second Au film, in this order; a semiconductor chip having an upper face and a lower face, and placed so as to bring the lower face into contact with the main face of the first electrode lead; a connection conductor for electrically connecting a pad, provided on the upper face of the semiconductor chip to a main face of the second electrode lead; and a resin which molds the first/second electrode leads and the semiconductor chip, while exposing each face that faces each main face of the first/second electrode leads. <P>COPYRIGHT: (C)2007,JPO&INPIT |
