发明名称 PERFORMING READ AND WRITE OPERATIONS IN SAME CYCLE FOR SRAM DEVICE
摘要 PROBLEM TO BE SOLVED: To configure a decoding signal circuit to generate a dual operation decoding signal that enables a memory device to perform a read operation and a write operation in one clock cycle. SOLUTION: The decoding signal circuit generates a dual operation decoding signal, thereby enabling a memory device to perform a read operation and a write operation in one clock cycle. The decoding signal circuit is configured such that a read decoding signal and a write decoding signal are generated and multiplexed together to form the dual operating decoding signal. The memory device receives a read address and a write address consecutively in one cycle to generate the dual operation decoding signal. A single operation, such as a read only operation or a write only operation, can be performed as well as the dual operation of performing the read operation and the write operation in the same cycle. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007128640(A) 申请公布日期 2007.05.24
申请号 JP20060294640 申请日期 2006.10.30
申请人 SONY CORP;SONY ELECTRONICS INC 发明人 CHEN HSIN-LEY S;TSENG CHIH-CHIANG;HUANG MU-HSIANG
分类号 G11C11/41;G11C11/413 主分类号 G11C11/41
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