发明名称 |
NANOWIRE SENSOR FOR DETECTING EXTERNAL ENVIRONMENT AND METHOD FOR MANUFACTURING NANOWIRE SENSOR FOR DETECTING EXTERNAL ENVIRONMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a wire sensor for detecting an external environment and a method for manufacturing a nanowire sensor for detecting an external environment by growing a metal nanowire without using a cast mold structure. SOLUTION: The method for manufacturing a nanowire sensor for detecting an external environment includes steps of: growing a first plurality of nanowires 108 on a substrate 102 such as silicon; depositing an insulator layer 120 on the first plurality of nanowires 108; exposing the top ends 116 of the first plurality of nanowires by etching; forming a metal electrode 112 patterned in such a manner that the end portion 114 of the electrode is across over the top ends 116 of the first plurality of nanowires; and exposing the first plurality of nanowires 108 below the end portion 114 of the electrode by etching. Otherwise, the method may includes forming a growth promotion layer on the substrate. The structure grows from the selectively formed growth promotion layer and contains exposed nanowires. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007125687(A) |
申请公布日期 |
2007.05.24 |
申请号 |
JP20060272246 |
申请日期 |
2006.10.03 |
申请人 |
SHARP CORP |
发明人 |
ZHANG FENG-YAN;BARROWCLIFF ROBERT A;LEE JONG-JAN;SHIEN TEN SUU |
分类号 |
B82B3/00;B82B1/00;C30B29/62;G01N27/30 |
主分类号 |
B82B3/00 |
代理机构 |
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