发明名称 NANOWIRE SENSOR FOR DETECTING EXTERNAL ENVIRONMENT AND METHOD FOR MANUFACTURING NANOWIRE SENSOR FOR DETECTING EXTERNAL ENVIRONMENT
摘要 PROBLEM TO BE SOLVED: To provide a wire sensor for detecting an external environment and a method for manufacturing a nanowire sensor for detecting an external environment by growing a metal nanowire without using a cast mold structure. SOLUTION: The method for manufacturing a nanowire sensor for detecting an external environment includes steps of: growing a first plurality of nanowires 108 on a substrate 102 such as silicon; depositing an insulator layer 120 on the first plurality of nanowires 108; exposing the top ends 116 of the first plurality of nanowires by etching; forming a metal electrode 112 patterned in such a manner that the end portion 114 of the electrode is across over the top ends 116 of the first plurality of nanowires; and exposing the first plurality of nanowires 108 below the end portion 114 of the electrode by etching. Otherwise, the method may includes forming a growth promotion layer on the substrate. The structure grows from the selectively formed growth promotion layer and contains exposed nanowires. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007125687(A) 申请公布日期 2007.05.24
申请号 JP20060272246 申请日期 2006.10.03
申请人 SHARP CORP 发明人 ZHANG FENG-YAN;BARROWCLIFF ROBERT A;LEE JONG-JAN;SHIEN TEN SUU
分类号 B82B3/00;B82B1/00;C30B29/62;G01N27/30 主分类号 B82B3/00
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