发明名称 |
Integrated electronic circuit incorporating a capacitor |
摘要 |
A non-volatile memory element includes a transistor for selecting the element and a capacitor for recording a binary value by electrical breakdown of an insulating layer ( 13 ) of the capacitor. A structure of the memory element is modified in order to allow a higher degree of integration of the element within an electronic circuit of the MOS type. In addition, the memory element is made more robust with respect to a high electrical voltage (VDD) used for recording the binary value. The transistor includes a drain in the substrate with electric field drift in a longitudinal direction extending towards the capacitor. The electric field drift region for the drain includes a first extension underneath the gate of the transistor opposite the source and a second extension underneath the insulating layer of the capacitor. Doping of the substrate for the electric field drift region is limited to a region substantially corresponding to a distance between the gate and an electrode of the capacitor.
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申请公布号 |
US2007114596(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20060600584 |
申请日期 |
2006.11.15 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
CANDELIER PHILIPPE;DEVOIVRE THIERRY;JOSSE EMMANUEL;LEFEBVRE SEBASTIEN |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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