A manganese-implanted silicon substrate exhibits ferromagnetism and a Curie temperature above room temperature when magnetized. The implant is done at a temperature of between about 250 C and about 800 C, while the manganese concentration is between about 0.01 atomic percent and 10 atomic percent. The silicon substrate can be p- or n-type with a doping concentration between 10 <SUP>15</SUP> and 10 <SUP>21</SUP> cm <SUP>-3</SUP> . Annealing may be done to increase the saturation magnetization.
申请公布号
WO2006102429(A3)
申请公布日期
2007.05.24
申请号
WO2006US10436
申请日期
2006.03.21
申请人
THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK;LABELLA, VINCENT PATRICK;BOLDUC, MARTIN;AWO-AFFOUDA, CHAFFRA ADEYANDJU;HUANG, MENGBING
发明人
LABELLA, VINCENT PATRICK;BOLDUC, MARTIN;AWO-AFFOUDA, CHAFFRA ADEYANDJU;HUANG, MENGBING