| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a reliable contact plug for preventing the short-circuiting between the contact plug and bit wiring by applying a material, where the ratio of etching speed to that of a silicon nitride film becomes at least 100, to an interlayer film for forming a self-alignment contact plug. <P>SOLUTION: The bit wiring whose upper and side surfaces are covered with the silicon nitride films 120, 121 is formed, then the bit wiring is covered for forming a sacrifice interlayer film 126 made of an amorphous carbon film on an entire surface, the sacrifice interlayer film 126 and a lower-layer interlayer insulating film 109 are etched successively for forming contact holes 128, 129, and a capacitance contact plug 113 is formed. After that, the sacrifice interlayer film 126 is removed for forming the pole of the capacitance contact plug 113, a third interlayer insulating film is formed on the pole, the third interlayer insulating film is removed partially from the surface, and the surface of the capacitance contact plug 113 is exposed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
