| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an antireflection film which has an antireflection characteristic of low reflectance even in a sputtering method and permits the working in a film-forming time close to that in a vapor deposition method. <P>SOLUTION: The antireflection film is composed of 10 alternate layers of a high refractive index layer and a low refractive index layer whose substrate side initial layer is a high refractive index film and, when λ0 represents a standard wavelength of the antireflection film, the antireflection film is constituted as follows: that is, the sum film thickness of optical film thicknesses at λ0 of the high refractive index films is constituted to be 55% or less of the gross film thickness of optical film thicknesses at λ0 of the total layers. <P>COPYRIGHT: (C)2007,JPO&INPIT |
