发明名称 Method of two dimensional feature model calibration and optimization
摘要 A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
申请公布号 US2007117030(A1) 申请公布日期 2007.05.24
申请号 US20070655868 申请日期 2007.01.22
申请人 ASML MASKTOOLS B. V. 发明人 LAIDIG THOMAS;CHEN JANG F.;SHI XUELONG;SCHLIEF RALPH;HOLLERBACH UWE;WAMPLER KURT E.
分类号 G03F1/00;G03F1/08;G03F1/14;G03F1/36;G03F7/20;H01L21/027 主分类号 G03F1/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利