发明名称 |
IN SITU GETTER PUMP SYSTEM AND METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide an in situ getter pump having a heating device to selectively discharge different non-noble gases at different temperatures. SOLUTION: A wafer processing system includes: a processing chamber; a low pressure pump coupled to the processing chamber for pumping noble gas out of the processing chamber; a valve mechanism coupling a source of noble gas to the processing chamber; the in situ getter pump disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber; and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gasses that are pumped from the chamber. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007127130(A) |
申请公布日期 |
2007.05.24 |
申请号 |
JP20070004790 |
申请日期 |
2007.01.12 |
申请人 |
SAES PURE GAS INC |
发明人 |
LORIMER D'ARCY H;KRUEGER GORDON P |
分类号 |
F04B37/02;C23C14/54;C23C14/56;F04B37/08;F04B37/14;F04B37/16;H01L21/02;H01L21/20 |
主分类号 |
F04B37/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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