发明名称 |
SEMICONDUCTOR DEVICE HAVING REDUCED GATE CHARGE AND REDUCED ON RESISTANCE AND METHOD |
摘要 |
In one embodiment, a semiconductor device comprises a semiconductor material having a first conductivity type with a body region of a second conductivity type disposed in the semiconductor material. The body region is adjacent a JFET region. A source region of the first conductivity type is disposed in the body region. A gate layer is disposed over the semiconductor material and has a first opening over the JFET region and a second opening over the body region.
|
申请公布号 |
US2007117305(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20070624560 |
申请日期 |
2007.01.18 |
申请人 |
VENKATRAMAN PRASAD;WAN IRENE S |
发明人 |
VENKATRAMAN PRASAD;WAN IRENE S. |
分类号 |
H01L21/8238;H01L27/098;H01L29/08;H01L29/423;H01L29/78;H01L29/80 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|