发明名称 High density three-dimensional RF / microwave switch architecture
摘要 RF switching system ( 100, 200 ) formed from a structure ( 102, 202 ) comprised of dielectric material. The structure can have two or more faces ( 104, 204 ), with at least one face located in a plane exclusive of at least a second one of the faces. For example, the structure can define a geometric shape that is a polyhedron. RF switches ( 106, 206 ) can be disposed on two or more of the faces. Conductive RF feed stubs ( 110, 210 ) are provided for each RF switch extending from an interconnection point ( 114, 214 ) to electrical contact terminals ( 116, 216 ) that are respectively connected to the RF switches. The interconnection point is located within the structure at a location generally medial to the two or more of terminals.
申请公布号 US2007115076(A1) 申请公布日期 2007.05.24
申请号 US20050284293 申请日期 2005.11.21
申请人 HARRIS CORPORATION 发明人 KHAZANOV ALEKSANDR
分类号 H01P1/10 主分类号 H01P1/10
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