| 摘要 |
A plasma processing apparatus includes a stage ( 3 ) on which an object ( 4 ) to be processed is to be placed, a vessel ( 1 ) which houses the stage, a conductive plate ( 24 ) which is arranged to oppose the stage, an antenna element ( 27 ) which is formed on the conductive plate, a waveguide member ( 22, 23 ) which constitutes, together with the conductive plate, a waveguide ( 21 ) which guides a high-frequency electromagnetic field to be supplied to the vessel through the antenna element, and cooling means ( 12, 31 - 35 ) for cooling the conductive plate. The conductive plate is cooled using the cooling means, so that a temperature change caused by heat generated by the conductive plate is suppressed. This can prevent the conductive plate from being deformed by the heat to change antenna characteristics. Hence, a distribution of a plasma (P) generated in the vessel is not affected by the change in the antenna characteristics, and the object to be processed arranged in the vessel can be processed uniformly.
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