GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS FOR WIDEBAND APPLICATIONS

摘要

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. Such properties enable the transistors to be used in RF power applications including wideband power applications (e.g., WiMAX, WiBRO, and others) based on OFDM modulation.