METHOD FOR FABRICATING HIGH-QUALITY SEMICONDUCTOR LIGHT-EMITTING DEVICES ON SILICON SUBSTRATES
摘要
<p>One embodiment of the present invention provides a semiconductor light- emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.</p>
申请公布号
WO2007056956(A1)
申请公布日期
2007.05.24
申请号
WO2006CN03098
申请日期
2006.11.17
申请人
LATTICE POWER (JIANGXI) CORPORATION;JIANG, FENGYI;SHAO, BILIN;WANG, LI;FANG, WENQING