| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having satisfactory forward voltage characteristics and a satisfactory switching speed. SOLUTION: The semiconductor device 10 comprises a semiconductor substrate 20 having n-type base regions 11, collector regions 12, p-type base regions 13, emitter regions 14, collector shorting regions 15, buffer regions 16, and p-type semiconductor regions 17; and gate bus lines 24 laid through an insulation layer 28 on the p-type semiconductor regions 17. The collector shorting regions 15 are formed on regions facing the gate bus lines 24 of the collector regions 12. This ensures the area of the collector regions 12 facing gate electrodes 22, and the collector shorting regions 15 serve for well discharging carriers. COPYRIGHT: (C)2007,JPO&INPIT
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