| 摘要 |
An integrated FET-thyristor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type formed in the substrate proximate an upper surface of the substrate, and a second semiconductor region of the second conductivity type formed in the substrate proximate a bottom surface of the substrate. The second semiconductor region is substantially vertically aligned with and spaced apart from the first semiconductor region. A third semiconductor region of the first conductivity type is formed in a portion of the first semiconductor region proximate the upper surface of the substrate. At least one gate region of the second conductivity type is formed on a sidewall of the substrate and substantially surrounding at least a portion of each of the first, second and third semiconductor regions.
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