| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method which can prevent a leakage current path from being formed in a power semiconductor device. <P>SOLUTION: In the manufacturing method of a group III nitride power semiconductor device, a transition layer is grown up on a substrate by at least two different growth methods. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007129203(A) |
申请公布日期 |
2007.05.24 |
| 申请号 |
JP20060266455 |
申请日期 |
2006.09.29 |
| 申请人 |
INTERNATL RECTIFIER CORP |
发明人 |
BEACH ROBERT;BRIDGER PAUL;BRIERE MICHAEL A |
| 分类号 |
H01L21/205;C23C14/06;C23C16/34;H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/205 |
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