发明名称 |
GCIB LINER AND HARDMASK REMOVAL PROCESS |
摘要 |
A method comprises depositing a dielectric film layer, a hard mask layer, and a patterned photo resist layer on a substrate. The method further includes selectively etching the dielectric film layer to form sub-lithographic features by reactive ion etch processing and depositing a barrier metal layer and a copper layer. The method further includes etching the barrier metal layer and hard mask layer by gas cluster ion beam (GCIB) processing.
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申请公布号 |
US2007117342(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20050164423 |
申请日期 |
2005.11.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN SHYNG-TSONG T.;FITZSIMMONS JOHN A.;PONOTH SHOM S.;SPOONER TERRY A. |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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