发明名称 |
CONTACT METHOD FOR THIN SILICON CARBIDE EPITAXIAL LAYER AND SEMICONDUCTOR DEVICES FORMED BY THOSE METHODS |
摘要 |
Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the, same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.
|
申请公布号 |
US2007117366(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20060556967 |
申请日期 |
2006.11.06 |
申请人 |
KORDESCH MARTIN E;BARTLOW HOWARD D;WOODIN RICHARD L |
发明人 |
KORDESCH MARTIN E.;BARTLOW HOWARD D.;WOODIN RICHARD L. |
分类号 |
H01L21/331;H01L21/44;H01L21/04;H01L21/203;H01L29/24;H01L29/732 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|