发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device of the present invention includes: forming a first film, a second film and a third film in sequence on a silicon substrate; patterning a resist film formed on the third film by conducting an exposure and developing process for the resist film employing an exposure mask including a phase shifter; selectively dry-etching the third film through a mask of the resist film employing the second film as an etch stop to process the third film into a first pattern; further dry-etching the third film employing the second film as an etch stop to partially remove the third film, thereby processing the third film into a second pattern; patterning the second film employing the third film having the second pattern as a mask; and patterning the first film employing the patterned second film as a mask.
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申请公布号 |
US2007117395(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20060602180 |
申请日期 |
2006.11.21 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KORETSUNE TOSHIHISA;FUJITA MASATO |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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