Selective etching of titanium nitride with xenon difluoride

摘要

This invention relates to an improved process for the selective etching of TiN from silicon dioxide (quartz) and SiN surfaces commonly found in semiconductor deposition chambers equipment and tools. In the process, an SiO₂ or SiN surface having TiN thereon is contacted with XeF₂ in a contact zone to selectively convert the TiN to a volatile species and then the volatile species is removed from the contact zone. XeF₂ can be preformed or formed in situ by reaction between Xe and a fluorine compound.