| 摘要 |
A device line width characteristic is predicted, based on the sharp characteristic of a projection image of a prescribed pattern (steps (104-110)), and exposure conditions of the pattern are adjusted, based on the predicted device line width characteristic (step (112)). Then, exposure is performed under the adjusted exposure conditions, namely, patterning of a resist on a substrate is performed by using the projection image of the pattern (step (114)). A resist pattern satisfying a desired device line width characteristic is formed on the substrate by developing the substrate after such patterning. Therefore, the pattern after etching can be formed with a desired line width by etching the substrate by using the resist pattern as a mask. |
