| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor crystal manufacturing method for manufacturing a high quality group III nitride-based compound semiconductor crystal at a low cost by a flux method. SOLUTION: After an n-type GaN single crystal 20 is grown to have a sufficient thickness, e.g., about 500μm or more by the flux method, the temperature of a crucible is successively maintained at 850-880°C until a protective film and a silicon substrate 11 are dissolved completely in a flux. Thereafter, the temperature of a reaction chamber is lowered to a temperature of≤100°C in a nitrogen gas atmosphere. However, at least one part of the protective film or the silicon substrate 11 may be dissolved in the growth process of the GaN single crystal 20. The manner of parallel simultaneous progress of these processes can be adequately controlled, for example, by the film-forming mode of the protective film. In the case that the silicon substrate 11 dissolved in the flux is added in a growing GaN single crystal 20 as an n-type additive (si), an n-type semiconductor crystal is obtained. COPYRIGHT: (C)2007,JPO&INPIT
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