发明名称 Multi-layered magnetic memory structures
摘要 An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
申请公布号 US2007115718(A1) 申请公布日期 2007.05.24
申请号 US20050285991 申请日期 2005.11.23
申请人 SHARMA MANISH;TRAN LUNG;ANTHONY THOMAS C 发明人 SHARMA MANISH;TRAN LUNG;ANTHONY THOMAS C.
分类号 G11C11/14 主分类号 G11C11/14
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