| 摘要 |
<p>A semiconductor storage device is provided with a power supply generating circuit, which monitors a write margin as a control quantity for performing optimum power supply control at the time of controlling an SRAM cell power supply in writing operation and constantly ensures a fixed write margin, and a power supply selecting circuit, and switches a power supply voltage in writing. Stable write operation is achieved without significantly deteriorating the write time in an SRAM cell by switching the power supply voltage in writing, and a semiconductor storage device which can perform super high speed operation or super low speed operation is provided.</p> |
