POLISHING PROCESS FOR PRODUCING DAMAGE FREE SURFACES ON SEMI-INSULATING SILICON CARBIDE WAFERS

摘要

A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven. Subsequent to the second and third improved polishing process cycles and as shown in Figure 1C, the average roughness of the wafer surface has been reduced to 2.79A Ra.