| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an optical semiconductor element in which heat can be dissipated well and electrostatic breakdown strength of a surface emission semiconductor laser can be enhanced. <P>SOLUTION: An optical semiconductor element 1 comprising a semiconductor multilayer film L11, a separation layer SP, and a semiconductor multilayer film L12 formed sequentially on a semiconductor substrate SB, further includes an electrostatic breakdown voltage element 10 formed on the semiconductor multilayer film L11, and a surface emission semiconductor laser 20 formed on the semiconductor multilayer film L12 located above the semiconductor multilayer film L11. A portion 25 for constricting a current flowing into the surface emission semiconductor laser 20 is formed in the semiconductor multilayer film L12 on which the surface emission semiconductor laser 20 is formed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
