HOT ELECTRON TRANSISTOR

摘要

It is possible reduce a charging time by increasing the maximum current density of emitter current and obtain a higher-speed operation of a hot electron transistor. The hot electron transistor comprises: an emitter electrode and an emitter layer; a collector electrode and a collector layer; an active layer formed of an intrinsic semiconductor in the traveling path of conduction electrons between the emitter layer and the collector layer; and a gate electrode installed on the active layer. The emitter layer is formed of a material having higher conduction band bottom energy than a material forming the active layer.