| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can reduce leakage current in capacitor. <P>SOLUTION: The method of manufacturing the semiconductor device comprises the steps of: forming a lower electrode 20 of capacitor 60 on a substrate 10 (A); performing heat treatment with respect to an underlaying layer 1 including at least the lower electrode 20, within atomic layer deposition equipment after the above (A) step (B); forming a dielectric film 40 on the underlayer 1 by an atomic layer deposition method, without releasing a chamber of the atomic layer deposition equipment into atmosphere following the above-mentioned (B) process (C); and forming the upper electrode 50 of the capacitor 60 on the dielectric film 40 (D). <P>COPYRIGHT: (C)2007,JPO&INPIT |
